| Importance : | XIII- 425 p., [1] leaf of plates |
| Résumé : | This book presents for the first time a unified treatment of the physical processes, mathematical models and numerical techniques for circuit, device and process simulation. At the macroscopic level linear and nonlinear circuit elements are introduced to yield a mathematical model of an integrated circuit. Numerical techniques used to solve this coupled system of ODEs are described. Microscopically, current flow within a transistor is modeled using the drift–diffusion and hydrodynamic PDE systems. Finite difference and finite element methods for spatial discretizations are treated, as are grid generation and refinement, upwinding, and multilevel schemes. At the fabrication level, physical processes such as diffusion, oxidation, and crystal growth are modeled using reaction–diffusion–convection equations. These models require multistep integration techniques and Krylov projection methods for successful implementation. Exercises, programming assignments, and an extensive bibliography are included to reinforce and extend the treatment. |
Circuit, device and process simulation (c1996)
