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| Titre : | Semiconductor devices : physics and technology : international student version | | Type de document : | texte imprime | | Auteurs : | Sze, Simon Lee, Auteur ; Jian-Ming Jin, Auteur | | Editeur : | New York : John Wiley & Sons | | Année de publication : | cop. 2013 | | Importance : | (IX-582 p.) | | Présentation : | ill. en noir et en coul., couv. ill. en coul. | | Format : | 26 cm | | ISBN/ISSN/EAN : | 978-81-265-1702-2 | | Note générale : | Sommaire et résumé disponibles sur le site de l'éditeur [consulté le 2013-01-21 (lien). - Réimpression : 2017
Notes bibliogr. Index | | Langues : | Français | | Mots-clés : | Semiconducteurs:problèmes et exercices Couches minces semiconductrices Transistors | | Index. décimale : | 621381 | | Résumé : | La 4e de couverture indique : Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.This awaited revision offers more than 50% new or revised material that reflects a multitude of important discoveries and advances in device physics and integrated circuit processing. | | Note de contenu : |
CHAPTER 0 1 Introduction
0 1 Semiconductor Devices
0 2 Semiconductor Technology
Summary
PART I SEMICONDUCTOR PHYSICS
CHAPTER 1 Energy Bands and Carrier Concentration in Thermal Equilibrium
1 1 Semiconductor Materials
1 2 Basic Crystal Structures
1 3 Valence Bonds
1 4 Energy Bands
1 5 Intrinsic Carrier Concentration
1 6 Donors and Acceptors
Summary
CHAPTER 2 Carrier Transport Phenomena
2 1 Carrier Drift
2 2 Carrier Diffusion
2 3 Generation and Recombination Processes
2 4 Continuity Equation
2 5 Thermionic Emission Process
2 6 Tunneling Process
2 7 Space-Charge Effect
2 8 High-Field Effects
Summary
PART II SEMICONDUCTOR DEVICES
CHAPTER 3 p-n Junction
3 1 Thermal Equilibrium Condition
3 2 Depletion Region
3 3 Depletion Capacitance
3 4 Current-Voltage Characteristics
3 5 Charge Storage and Transient Behavior
3 6 Junction Breakdown
3 7 Heterojunction
Summary
CHAPTER 4 Bipolar Transistors and Related Devices
4 1 Transistor Action
4 2 Static Characteristics of Bipolar Transistors
4 3 Frequency Response and Switching of Bipolar Transistors
4 4 Nonideal Effects
4 5 Heterojunction Bipolar Transistors
4 6 Thyristors and Related Power Devices
Summary
CHAPTER 5 MOS Capacitor and MOSFET
5 1 Ideal MOS Capacitor
5 2 SiO2-Si MOS Capacitor
5 3 Carrier Transport in MOS Capacitors
5 4 Charge-Coupled Devices (CCD)
5 5 MOSFET Fundamentals
Summary
CHAPTER 6 Advanced MOSFET and Related Devices
6 1 MOSFET Scaling
6 2 CMOS and BiCMOS
6 3 MOSFET on Insulator
6 4 MOS Memory Structures
6 5 Power MOSFET
Summary
CHAPTER 7 MESFET and Related Devices
7 1 Metal-Semiconductor Contacts
7 2 MESFET
7 3 MODFET
Summary
CHAPTER 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices
8 1 Microwave Frequency Bands
8 2 Tunnel Diode
8 3 IMPATT Diode
8 4 Transferred-Electron Devices
8 5 Quantum-Effect Devices
8 6 Hot-Electron Devices
Summary
CHAPTER 9 Light Emitting Diodes and Lasers
9 1 Radiative Transitions and Optical Absorption
9 2 Light-Emitting Diodes
9 3 Various Light-Emitting Diodes
9 4 Semiconductor Lasers
Summary
CHAPTER 10 Photodetectors and Solar Cells
10 1 Photodetectors
10 2 Solar Cells
10 3 Silicon and Compound-Semiconductor Solar Cells
10 4 Third-Generation Solar Cells
10 5 Optical Concentration
Summary
PART III SEMICONDUCTOR TECHNOLOGY
CHAPTER 11 Crystal Growth and Epitaxy
11 1 Silicon Crystal Growth from the Melt
11 2 Silicon Float-Zone Proces
11 3 GaAs Crystal-Growth Techniques
11 4 Material Characterization
11 5 Epitaxial-Growth Techniques
11 6 Structures and Defects in Epitaxial Layers
Summary
CHAPTER 12 Film Formation
12 1 Thermal Oxidation
12 2 Chemical Vapor Deposition of Dielectrics
12 3 Chemical Vapor Deposition of Polysilicon
12 4 Atom Layer Deposition
12 5 Metallization
Summary
CHAPTER 13 Lithography and Etching
13 1 Optical Lithography
13 2 Next-Generation Lithographic Methods
13 3 Wet Chemical Etching
13 4 Dry Etching
Summary
CHAPTER 14 Impurity Doping
14 1 Basic Diffusion Process
14 2 Extrinsic Diffusion
14 3 Diffusion-Related Processes
14 4 Range of Implanted Ions
14 5 Implant Damage and Annealing
14 6 Implantation-Related Processes
Summary
CHAPTER 15 Integrated Devices
15 1 Passive Components
15 2 Bipolar Technology
15 3 MOSFET Technology
15 4 MESFET Technology
15 5 Challenges for Nanoelectronics
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Semiconductor devices : physics and technology : international student version [texte imprime] / Sze, Simon Lee, Auteur ; Jian-Ming Jin, Auteur . - New York : John Wiley & Sons, cop. 2013 . - (IX-582 p.) : ill. en noir et en coul., couv. ill. en coul. ; 26 cm. ISBN : 978-81-265-1702-2 Sommaire et résumé disponibles sur le site de l'éditeur [consulté le 2013-01-21 (lien). - Réimpression : 2017
Notes bibliogr. Index Langues : Français | Mots-clés : | Semiconducteurs:problèmes et exercices Couches minces semiconductrices Transistors | | Index. décimale : | 621381 | | Résumé : | La 4e de couverture indique : Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits. Divided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.This awaited revision offers more than 50% new or revised material that reflects a multitude of important discoveries and advances in device physics and integrated circuit processing. | | Note de contenu : |
CHAPTER 0 1 Introduction
0 1 Semiconductor Devices
0 2 Semiconductor Technology
Summary
PART I SEMICONDUCTOR PHYSICS
CHAPTER 1 Energy Bands and Carrier Concentration in Thermal Equilibrium
1 1 Semiconductor Materials
1 2 Basic Crystal Structures
1 3 Valence Bonds
1 4 Energy Bands
1 5 Intrinsic Carrier Concentration
1 6 Donors and Acceptors
Summary
CHAPTER 2 Carrier Transport Phenomena
2 1 Carrier Drift
2 2 Carrier Diffusion
2 3 Generation and Recombination Processes
2 4 Continuity Equation
2 5 Thermionic Emission Process
2 6 Tunneling Process
2 7 Space-Charge Effect
2 8 High-Field Effects
Summary
PART II SEMICONDUCTOR DEVICES
CHAPTER 3 p-n Junction
3 1 Thermal Equilibrium Condition
3 2 Depletion Region
3 3 Depletion Capacitance
3 4 Current-Voltage Characteristics
3 5 Charge Storage and Transient Behavior
3 6 Junction Breakdown
3 7 Heterojunction
Summary
CHAPTER 4 Bipolar Transistors and Related Devices
4 1 Transistor Action
4 2 Static Characteristics of Bipolar Transistors
4 3 Frequency Response and Switching of Bipolar Transistors
4 4 Nonideal Effects
4 5 Heterojunction Bipolar Transistors
4 6 Thyristors and Related Power Devices
Summary
CHAPTER 5 MOS Capacitor and MOSFET
5 1 Ideal MOS Capacitor
5 2 SiO2-Si MOS Capacitor
5 3 Carrier Transport in MOS Capacitors
5 4 Charge-Coupled Devices (CCD)
5 5 MOSFET Fundamentals
Summary
CHAPTER 6 Advanced MOSFET and Related Devices
6 1 MOSFET Scaling
6 2 CMOS and BiCMOS
6 3 MOSFET on Insulator
6 4 MOS Memory Structures
6 5 Power MOSFET
Summary
CHAPTER 7 MESFET and Related Devices
7 1 Metal-Semiconductor Contacts
7 2 MESFET
7 3 MODFET
Summary
CHAPTER 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices
8 1 Microwave Frequency Bands
8 2 Tunnel Diode
8 3 IMPATT Diode
8 4 Transferred-Electron Devices
8 5 Quantum-Effect Devices
8 6 Hot-Electron Devices
Summary
CHAPTER 9 Light Emitting Diodes and Lasers
9 1 Radiative Transitions and Optical Absorption
9 2 Light-Emitting Diodes
9 3 Various Light-Emitting Diodes
9 4 Semiconductor Lasers
Summary
CHAPTER 10 Photodetectors and Solar Cells
10 1 Photodetectors
10 2 Solar Cells
10 3 Silicon and Compound-Semiconductor Solar Cells
10 4 Third-Generation Solar Cells
10 5 Optical Concentration
Summary
PART III SEMICONDUCTOR TECHNOLOGY
CHAPTER 11 Crystal Growth and Epitaxy
11 1 Silicon Crystal Growth from the Melt
11 2 Silicon Float-Zone Proces
11 3 GaAs Crystal-Growth Techniques
11 4 Material Characterization
11 5 Epitaxial-Growth Techniques
11 6 Structures and Defects in Epitaxial Layers
Summary
CHAPTER 12 Film Formation
12 1 Thermal Oxidation
12 2 Chemical Vapor Deposition of Dielectrics
12 3 Chemical Vapor Deposition of Polysilicon
12 4 Atom Layer Deposition
12 5 Metallization
Summary
CHAPTER 13 Lithography and Etching
13 1 Optical Lithography
13 2 Next-Generation Lithographic Methods
13 3 Wet Chemical Etching
13 4 Dry Etching
Summary
CHAPTER 14 Impurity Doping
14 1 Basic Diffusion Process
14 2 Extrinsic Diffusion
14 3 Diffusion-Related Processes
14 4 Range of Implanted Ions
14 5 Implant Damage and Annealing
14 6 Implantation-Related Processes
Summary
CHAPTER 15 Integrated Devices
15 1 Passive Components
15 2 Bipolar Technology
15 3 MOSFET Technology
15 4 MESFET Technology
15 5 Challenges for Nanoelectronics
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Semiconductor devices (cop. 2013)
